Important Notice Regarding Scitation Services

Scitation will be upgrading its access control system between July 4 and July 10, 2014. During this process, existing subscriptions and purchased content will remain available and unaffected, but some site and personal account functionality will be disabled.

Services will be fully restored on July 10, 2014. Thank you for your patience!

Click here for complete details.

1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.98298
/content/aip/journal/apl/51/23/10.1063/1.98298
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/23/10.1063/1.98298
/content/aip/journal/apl/51/23/10.1063/1.98298
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/51/23/10.1063/1.98298
1987-12-07
2014-07-10
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scitation|Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/23/10.1063/1.98298
10.1063/1.98298
SEARCH_EXPAND_ITEM