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Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy
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10.1063/1.98298
/content/aip/journal/apl/51/23/10.1063/1.98298
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/23/10.1063/1.98298
/content/aip/journal/apl/51/23/10.1063/1.98298
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/content/aip/journal/apl/51/23/10.1063/1.98298
1987-12-07
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/23/10.1063/1.98298
10.1063/1.98298
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