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Raman scattering study of low dose Si±‐implanted GaAs used for metal‐semiconductor field‐effect transistor fabrication
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10.1063/1.98506
/content/aip/journal/apl/51/23/10.1063/1.98506
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/23/10.1063/1.98506
/content/aip/journal/apl/51/23/10.1063/1.98506
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/content/aip/journal/apl/51/23/10.1063/1.98506
1987-12-07
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman scattering study of low dose Si±‐implanted GaAs used for metal‐semiconductor field‐effect transistor fabrication
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/23/10.1063/1.98506
10.1063/1.98506
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