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Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface
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10.1063/1.98279
/content/aip/journal/apl/51/24/10.1063/1.98279
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/24/10.1063/1.98279
/content/aip/journal/apl/51/24/10.1063/1.98279
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/content/aip/journal/apl/51/24/10.1063/1.98279
1987-12-14
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/24/10.1063/1.98279
10.1063/1.98279
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