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Damage annealing behavior of 3 MeV Si+‐implanted silicon
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10.1063/1.98912
/content/aip/journal/apl/51/3/10.1063/1.98912
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/3/10.1063/1.98912
/content/aip/journal/apl/51/3/10.1063/1.98912
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/content/aip/journal/apl/51/3/10.1063/1.98912
1987-07-20
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage annealing behavior of 3 MeV Si+‐implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/3/10.1063/1.98912
10.1063/1.98912
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