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Ion‐beam‐induced epitaxy and interfacial segregation of Au in amorphous silicon
1.G. L. Olson, Mater. Res. Soc. Symp. Proc. 35, 25 (1985).
2.R. G. Elliman, J. S. Williams, W. L. Brown, A. Leiberich, D. M. Maher, and R. V. Knoell, Nucl. Instrum. Methods B 19/20, 435 (1987).
3.J. Linnros, B. Svensson, and G. Holmen, Phys. Rev. B 30, 3629 (1984).
4.D. C. Jacobson, J. M. Poate, and G. L. Olson, Appl. Phys. Lett. 48, 118 (1986).
5.J. M. Poate, D. C. Jacobson, J. S. Williams, R. G. Elliman, and D. O. Boerma, Nucl. Instrum. Methods B 19/20, 480 (1987).
6.D. C. Jacobson, R. G. Elliman, J. M. Gibson, G. L. Olson, J. M. Poate, and J. S. Williams, Mater. Res. Soc., Vol. 74 (in press).
7.P. Baeri and S. U. Campisano, in Laser Annealing of Semiconductors, edited by J. M. Poate and J. W. Mayer (Academic, New York, 1982, Chap. 4).
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