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Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress
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10.1063/1.98413
/content/aip/journal/apl/51/6/10.1063/1.98413
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/6/10.1063/1.98413
/content/aip/journal/apl/51/6/10.1063/1.98413
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/content/aip/journal/apl/51/6/10.1063/1.98413
1987-08-10
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/6/10.1063/1.98413
10.1063/1.98413
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