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GaAs growth by atomic layer epitaxy using diethylgalliumchloride
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10.1063/1.99306
/content/aip/journal/apl/52/1/10.1063/1.99306
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/1/10.1063/1.99306
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/content/aip/journal/apl/52/1/10.1063/1.99306
1988-01-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs growth by atomic layer epitaxy using diethylgalliumchloride
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/1/10.1063/1.99306
10.1063/1.99306
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