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Combined Rayleigh and Raman scattering study of Al x Ga1 x As grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions
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10.1063/1.99311
/content/aip/journal/apl/52/1/10.1063/1.99311
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/1/10.1063/1.99311
/content/aip/journal/apl/52/1/10.1063/1.99311
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/content/aip/journal/apl/52/1/10.1063/1.99311
1988-01-04
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/1/10.1063/1.99311
10.1063/1.99311
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