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Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3 plasma treatment
1.T. Ito, T. Nakamura, and H. Ishikawa, IEEE Trans. Electron Devices ED‐29, 498 (1982).
2.A. Ermolieff, P. Bernard, S. Marthon, and J. C. Costa, J. Appl. Phys. 60, 3162 (1986).
3.For example, see S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
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