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Novel high voltage transistor fabricated using the i n s i t u junctions in a Si‐TaSi2 eutectic composite
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10.1063/1.99187
/content/aip/journal/apl/52/14/10.1063/1.99187
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/14/10.1063/1.99187
/content/aip/journal/apl/52/14/10.1063/1.99187
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/content/aip/journal/apl/52/14/10.1063/1.99187
1988-04-04
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Novel high voltage transistor fabricated using the insitu junctions in a Si‐TaSi2 eutectic composite
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/14/10.1063/1.99187
10.1063/1.99187
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