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Elimination of secondary defects in As‐implanted Si by high concentration oxygen atoms
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10.1063/1.99160
/content/aip/journal/apl/52/15/10.1063/1.99160
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/15/10.1063/1.99160
/content/aip/journal/apl/52/15/10.1063/1.99160
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/content/aip/journal/apl/52/15/10.1063/1.99160
1988-04-11
2014-12-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Elimination of secondary defects in As‐implanted Si by high concentration oxygen atoms
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/15/10.1063/1.99160
10.1063/1.99160
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