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Reduction in the concentration of D X centers in Si‐doped GaAlAs using the planar doping technique
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10.1063/1.99167
/content/aip/journal/apl/52/15/10.1063/1.99167
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/15/10.1063/1.99167
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/content/aip/journal/apl/52/15/10.1063/1.99167
1988-04-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction in the concentration of DX centers in Si‐doped GaAlAs using the planar doping technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/15/10.1063/1.99167
10.1063/1.99167
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