No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Pseudomorphic ZnSe/n‐GaAs doped‐channel field‐effect transistors by interrupted molecular beam epitaxy
1.H. Hida, A. Okamoto, H. Toyoshima, and K. Ohata, IEEE Electron Device Lett. EDL‐7, 625 (1986).
2.B. Kim, H. Q. Tserng, and H. D. Shin, IEEE Electron Device Lett. EDL‐5, 494 (1984).
3.R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, M. Vaziri, C. Choi, and N. Otsaka, Appl. Phys. Lett. 50, 200 (1987).
4.S. P. Kowalczyk, D. L. Miller, J. R. Waldrop, P. G. Newman, and R. W. Grant, J. Vac. Sci. Technol. 19, 255 (1981).
5.D. L. Miller, R. T. Chen, K. Elliott, and S. P. Kowalczyk, J. Appl. Phys. 57, 1922 (1985).
6.It has been experimentally determined that the oxygen is introduced before the sample is removed from the III‐V system.
7.L. A. Kolodziejski, R. L. Gunshor, A. V. Nurmikko, and N. Otsuka, in Proceedings of the NATO Advanced Workshop on “Thin‐Film Growth Techniques for Low‐Dimensional Structures,”Brighton, U. K., September 15–19, 1986 (Plenum, New York, 1987).
8.M. C. Tamargo, J. L. de Miguel, D. M. Hwang, and H. H. Farrell, paper presented at the 8th Molecular Beam Epitaxy Workshop, Los Angeles, September 10–12, 1987.
9.T. Yao, Y. Okada, S. Matsuri, K. Ishida, and I. Fujimoto, J. Cryst. Growth 81, 518 (1987).
10.L. A. Kolodziejski, R. L. Gunshor, M. R. Melloch, M. Vaziri, C. Choi, and N. Otsuka, Growth of Compound Semiconductors, edited by R. L. Gunshor and H. Morkoç, Proc. SPIE 796, 86 (1987).
11.G. D. Studtmann, R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, N. Otsuka, D. P. Munich, J. A. Cooper, Jr., and R. F. Pierret, paper presented at the IEEE 45th Annual Device Research Conference, Santa Barbara, California, June 22–24, 1987.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month