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Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films
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10.1063/1.99151
/content/aip/journal/apl/52/16/10.1063/1.99151
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/16/10.1063/1.99151
/content/aip/journal/apl/52/16/10.1063/1.99151
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/content/aip/journal/apl/52/16/10.1063/1.99151
1988-04-18
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/16/10.1063/1.99151
10.1063/1.99151
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