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High‐speed GaAs pin photodiodes grown on Si substrates by molecular beam epitaxy
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10.1063/1.99131
/content/aip/journal/apl/52/17/10.1063/1.99131
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/17/10.1063/1.99131
/content/aip/journal/apl/52/17/10.1063/1.99131
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/content/aip/journal/apl/52/17/10.1063/1.99131
1988-04-25
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High‐speed GaAs p‐i‐n photodiodes grown on Si substrates by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/17/10.1063/1.99131
10.1063/1.99131
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