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Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett. 5 2, 1053 (1988)]
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1988-04-25
2014-07-30
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Scitation: Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1053 (1988)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/17/10.1063/1.99660
10.1063/1.99660
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