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Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures
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10.1063/1.99709
/content/aip/journal/apl/52/20/10.1063/1.99709
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/20/10.1063/1.99709
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/content/aip/journal/apl/52/20/10.1063/1.99709
1988-05-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/20/10.1063/1.99709
10.1063/1.99709
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