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Oval defects in Ga1−x Al x As molecular beam epitaxy layers: A Raman scattering and photoluminescence combined study
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10.1063/1.99593
/content/aip/journal/apl/52/23/10.1063/1.99593
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/23/10.1063/1.99593
/content/aip/journal/apl/52/23/10.1063/1.99593
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/content/aip/journal/apl/52/23/10.1063/1.99593
1988-06-06
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oval defects in Ga1−xAlxAs molecular beam epitaxy layers: A Raman scattering and photoluminescence combined study
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/23/10.1063/1.99593
10.1063/1.99593
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