No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining
1.See for example J. D. Plummer, “Process Simulators for Silicon VLSI and High‐Speed GaAs Devices,” Technical Report, Stanford Electronics Labs., Stanford University, August 1986, and references therein.
2.T. T. Sheng and R. B. Marcus, J. Electrochem. Soc. 128, 881 (1981).
3.W. F. Tseng and B. R. Wilkins, J. Electrochem. Soc. 134, 1258 (1987).
4.H. J. Leamy, J. Appl. Phys. 53, R51 (1982).
5.F. Lau and U. Gösele, Appl. Phys. A 40, 101 (1986).
6.R. Subrahmanyan, H. Z. Massoud, and R. B. Fair, in Semiconductor Fabrication: Technology and Metrology, ASTM STP 990, edited by D. C. Gupta (American Society for Testing Materials, Philadelphia, 1988).
7.A. H. Tong, E. F. Gorey, and C. P. Schneider, Rev. Sci. Instrum. 43, 320 (1972).
8.R. Subrahmanyan, H. Z. Massoud, and R. B. Fair, Electrochemical Society Abstract No. 692, Extended Abstracts, Electrochemical Society Fall Meeting, Honolulu, Hawaii, October 18–23, 1987, Vol. 87‐2, p. 982.
9.R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North‐Holland, New York, 1981), p. 349.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month