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Characteristics of pn junctions fabricated on Hg1−x Cd x Te epilayers grown by molecular beam epitaxy
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10.1063/1.99561
/content/aip/journal/apl/52/25/10.1063/1.99561
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/25/10.1063/1.99561
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/content/aip/journal/apl/52/25/10.1063/1.99561
1988-06-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of p‐n junctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/25/10.1063/1.99561
10.1063/1.99561
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