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Inelastic scattering of electrons traversing semiconductor heterojunctions
1.A. F. J. Levi and T. H. Chiu, Appl. Phys. Lett. 51, 984 (1987).
2.E. M. Conwell, “High Field Transport in Semiconductors,” in Solid State Physics, Advances in Research and Applications, edited by H. Ehrenreieh, F. Seitz, and D. Turnbull (Academic, New York, 1967), Vol. 9, p. 156.
3.L. D. Landau and E. M. Lifshitz, Quantum Mechanics (Pergamon, Oxford, 1981).
4.Consider three regions with potential width [see Fig. 2(a)], and transverse effective electron mass bounded on either side by infinite potential barriers. For simplicity we assume the effective masses parallel to the interface to be equal, i.e., The energy eigenvalues for the system are found by solving for where are the transverse velocities and are the transverse momenta.
5.It would be interesting to consider the effect dissipative processes, such as phonon scattering, have on this transmission probability. See, e.g., R. Bruinsma and P. M. Platzman, Phys. Rev. B 35, 4221 (1987).
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