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High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates
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10.1063/1.99521
/content/aip/journal/apl/52/3/10.1063/1.99521
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/3/10.1063/1.99521
/content/aip/journal/apl/52/3/10.1063/1.99521
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/content/aip/journal/apl/52/3/10.1063/1.99521
1988-01-18
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/3/10.1063/1.99521
10.1063/1.99521
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