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Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence
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10.1063/1.99526
/content/aip/journal/apl/52/3/10.1063/1.99526
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/3/10.1063/1.99526
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/content/aip/journal/apl/52/3/10.1063/1.99526
1988-01-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/3/10.1063/1.99526
10.1063/1.99526
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