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Epitaxial Ge x Si1−x /Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates
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10.1063/1.99528
/content/aip/journal/apl/52/3/10.1063/1.99528
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/3/10.1063/1.99528
/content/aip/journal/apl/52/3/10.1063/1.99528
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/content/aip/journal/apl/52/3/10.1063/1.99528
1988-01-18
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial GexSi1−x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/3/10.1063/1.99528
10.1063/1.99528
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