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Electrical properties of shallow p +n junctions formed by BF2 ion implantation in germanium preamorphized silicon
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10.1063/1.99494
/content/aip/journal/apl/52/4/10.1063/1.99494
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/4/10.1063/1.99494
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/content/aip/journal/apl/52/4/10.1063/1.99494
1988-01-25
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of shallow p+‐n junctions formed by BF2 ion implantation in germanium preamorphized silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/4/10.1063/1.99494
10.1063/1.99494
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