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Determination of the critical layer thickness of Si1−x Ge x /Si heterostructures by direct observation of misfit dislocations
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10.1063/1.99472
/content/aip/journal/apl/52/5/10.1063/1.99472
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/5/10.1063/1.99472
/content/aip/journal/apl/52/5/10.1063/1.99472
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/content/aip/journal/apl/52/5/10.1063/1.99472
1988-02-01
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocations
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/5/10.1063/1.99472
10.1063/1.99472
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