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Quantum capacitance devices
1.T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
2.E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
3.F. Stern, J. Vac. Sci. Technol. 11, 962 (1974);
3.J. R. Brews, J. Appl. Phys. 46, 2181 (1975);
3.E. Arnold, Surf. Sci. 58, 60 (1976).
4.This elementary derivation is presented here in the belief that it might elucidate the field‐penetration aspect of the problem, important for the applications discussed below.
5.It is instructive to consider the transition to a 3D case. If more than one 2D subband are occupied, then the value of must be multiplied by the number of filled subbands (weighted by the Fermi function). The quantum capacitance increases, and in the 3D limit it drops out. In an ordinary metal sheet, however thin, the quantum capacitance associated with one metal surface is so large that the field never penetrates to the other surface. Another way of saying the same thing is that the screening length in a 3D metal is usually much shorter than any realistic Sim thickness.
6.S. Luryi and S. M. Sze, in Silicon Molecular Beam Epitaxy, edited by E. Kasper and J. C. Bean (CRC Uniscience, Boca Raton, FL, 1987), Vol. 1, Chap. 8, and references cited therein.
7.A. Kastalsky and A. A. Grinberg (unpublished).
8.S. Luryi, in Heterojunction Band Discontinuities: Physics and Device Applications, edited by F. Capasso and G. Margaritondo (Elsevier, Amsterdam, 1987), Chap. 12.
9.A. R. Bonnefoi, D. H. Chow, and T. C. McGill, Appl. Phys. Lett. 47, 888 (1985).
10.The fact that a single‐barrier QW structure does give rise to a negative differential resistance characteristic was predicted by S. Luryi, in Technical Digest of the IEEE International Electron Devices Meeting, 2–4 Dec, 1985 Washington, DC, p. 666, and confirmed experimentally by H. Morkoç, J. Chen, U. K. Reddy, T. Henderson, and S. Luryi, Appl. Phys. Lett. 49, 70 (1986).
11.S. Luryi and F. Capasso, Appl. Phys. Lett. 47, 1347 (1985);
11.S. Luryi and F. Capasso, 48, 1693 (E) (1986)., Appl. Phys. Lett.
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