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Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane
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10.1063/1.99397
/content/aip/journal/apl/52/7/10.1063/1.99397
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/7/10.1063/1.99397
/content/aip/journal/apl/52/7/10.1063/1.99397
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/content/aip/journal/apl/52/7/10.1063/1.99397
1988-02-15
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/7/10.1063/1.99397
10.1063/1.99397
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