No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy
1.H. Z. Chen, A. Ghaffari, H. Wang, H. Morkoç, and A. Yariv, presented at the GaAs on Si Workshop held in Marina del Ray, California, June 18, 19, 1987. This was the first cw operation reported.
1.Also see Opt. Lett. 12, 812 (1987);
1.Appl. Phys. Lett. 51, 1320 (1987);
1.Semicond. Inter. 10, 22 (Sept. 1987);
1.Photonics Spectra 21, 36 (Sept. 1987).
2.W. T. Tsang, Appl. Phys. Lett. 39, 134 (1981).
3.H. Z. Chen, A. Ghaffari, H. Morkoç, and A. Yariv (unpublished).
4.H. Z. Chen, J. Paslaski, A. Yariv, and H. Morkoç, Res. Dev. Jan. (1988).
5.T. Sanada, M. Kuno, and O. Wada, Jpn. J. Appl. Phys. 25, 1443 (1986).
6.K. Lau and A. Yariv, in Semiconductors and Semimetals, edited by W. T. Tsang (Academic, Orlando, Fl, 1985), Vol. 22, p. 69.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month