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High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy
1.H. Z. Chen, A. Ghaffari, H. Wang, H. Morkoç, and A. Yariv, presented at the GaAs on Si Workshop held in Marina del Ray, California, June 18, 19, 1987. This was the first cw operation reported.
1.Also see Opt. Lett. 12, 812 (1987);
1.Appl. Phys. Lett. 51, 1320 (1987);
1.Semicond. Inter. 10, 22 (Sept. 1987);
1.Photonics Spectra 21, 36 (Sept. 1987).
2.W. T. Tsang, Appl. Phys. Lett. 39, 134 (1981).
3.H. Z. Chen, A. Ghaffari, H. Morkoç, and A. Yariv (unpublished).
4.H. Z. Chen, J. Paslaski, A. Yariv, and H. Morkoç, Res. Dev. Jan. (1988).
5.T. Sanada, M. Kuno, and O. Wada, Jpn. J. Appl. Phys. 25, 1443 (1986).
6.K. Lau and A. Yariv, in Semiconductors and Semimetals, edited by W. T. Tsang (Academic, Orlando, Fl, 1985), Vol. 22, p. 69.
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