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Electron beam source molecular beam epitaxial growth of analog graded Al x Ga1−x As ballistic transistors
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10.1063/1.99394
/content/aip/journal/apl/52/8/10.1063/1.99394
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/8/10.1063/1.99394
/content/aip/journal/apl/52/8/10.1063/1.99394
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/content/aip/journal/apl/52/8/10.1063/1.99394
1988-02-22
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron beam source molecular beam epitaxial growth of analog graded AlxGa1−xAs ballistic transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/8/10.1063/1.99394
10.1063/1.99394
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