1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties
Rent:
Rent this article for
USD
10.1063/1.99361
/content/aip/journal/apl/52/9/10.1063/1.99361
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/9/10.1063/1.99361
/content/aip/journal/apl/52/9/10.1063/1.99361
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/52/9/10.1063/1.99361
1988-02-29
2014-10-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/9/10.1063/1.99361
10.1063/1.99361
SEARCH_EXPAND_ITEM