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Secondary ion mass spectrometry study of e x s i t u annealing of epitaxial GaAs grown on Si substrates
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10.1063/1.99362
/content/aip/journal/apl/52/9/10.1063/1.99362
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/9/10.1063/1.99362
/content/aip/journal/apl/52/9/10.1063/1.99362
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/content/aip/journal/apl/52/9/10.1063/1.99362
1988-02-29
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Secondary ion mass spectrometry study of exsitu annealing of epitaxial GaAs grown on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/52/9/10.1063/1.99362
10.1063/1.99362
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