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GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy
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10.1063/1.100048
/content/aip/journal/apl/53/11/10.1063/1.100048
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/11/10.1063/1.100048
/content/aip/journal/apl/53/11/10.1063/1.100048
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/content/aip/journal/apl/53/11/10.1063/1.100048
1988-09-12
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/11/10.1063/1.100048
10.1063/1.100048
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