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1.3 μm InGaAsP buried crescent lasers with cobalt‐doped semi‐insulating current blocking layers grown by metalorganic chemical vapor deposition
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10.1063/1.99994
/content/aip/journal/apl/53/14/10.1063/1.99994
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/14/10.1063/1.99994
/content/aip/journal/apl/53/14/10.1063/1.99994
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/content/aip/journal/apl/53/14/10.1063/1.99994
1988-10-03
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.3 μm InGaAsP buried crescent lasers with cobalt‐doped semi‐insulating current blocking layers grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/14/10.1063/1.99994
10.1063/1.99994
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