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Structure of lattice‐strained In x Ga1−x As/GaAs layers studied by transmission electron microscopy
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10.1063/1.99960
/content/aip/journal/apl/53/15/10.1063/1.99960
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/15/10.1063/1.99960
/content/aip/journal/apl/53/15/10.1063/1.99960
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/content/aip/journal/apl/53/15/10.1063/1.99960
1988-10-10
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/15/10.1063/1.99960
10.1063/1.99960
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