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Ultrafast diffusion of a defect in indium‐doped silicon introduced by chemomechanical polishing
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10.1063/1.99962
/content/aip/journal/apl/53/15/10.1063/1.99962
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/15/10.1063/1.99962
/content/aip/journal/apl/53/15/10.1063/1.99962
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/content/aip/journal/apl/53/15/10.1063/1.99962
1988-10-10
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast diffusion of a defect in indium‐doped silicon introduced by chemomechanical polishing
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/15/10.1063/1.99962
10.1063/1.99962
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