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Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon
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10.1063/1.99937
/content/aip/journal/apl/53/17/10.1063/1.99937
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/17/10.1063/1.99937
/content/aip/journal/apl/53/17/10.1063/1.99937
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/content/aip/journal/apl/53/17/10.1063/1.99937
1988-10-24
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/17/10.1063/1.99937
10.1063/1.99937
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