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Schottky barrier instabilities due to contamination
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11.With the exception of the annealed Ag/GaAs diodes, all of the unannealed and annealed diodes formed on the air‐exposed surfaces were found to have electrical chracteristics which were consistent for all of the diodes measured on each of the samples. Only in the case of the annealed air‐exposed Ag/GaAs diodes a wider variation on one of the samples was found. The I‐V barrier height for the diodes on these inconsistent sample was found to sporadically range from to 0.91 eV as compared to a value of 0.79 eV which was consistently found for the other annealed Ag air‐exposed sample.
12.The I‐V technique is sensitive to barrier lowering mechanisms such as the image force and tunneling. If I‐V barrier heights are compared to C‐V values, a correction due to these mechanisms should be added (for the values referred to here, the correction is of the order of 0.07 eV).
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