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New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma
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10.1063/1.100273
/content/aip/journal/apl/53/22/10.1063/1.100273
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/22/10.1063/1.100273
/content/aip/journal/apl/53/22/10.1063/1.100273
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/content/aip/journal/apl/53/22/10.1063/1.100273
1988-11-28
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/22/10.1063/1.100273
10.1063/1.100273
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