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Use of independently controlled Cl radical and Ar ion beams for anisotropic chemically enhanced etching of GaAs
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10.1063/1.100262
/content/aip/journal/apl/53/23/10.1063/1.100262
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/23/10.1063/1.100262
/content/aip/journal/apl/53/23/10.1063/1.100262
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/content/aip/journal/apl/53/23/10.1063/1.100262
1988-12-05
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of independently controlled Cl radical and Ar ion beams for anisotropic chemically enhanced etching of GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/23/10.1063/1.100262
10.1063/1.100262
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