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Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs
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10.1063/1.100410
/content/aip/journal/apl/53/24/10.1063/1.100410
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/24/10.1063/1.100410
/content/aip/journal/apl/53/24/10.1063/1.100410
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/content/aip/journal/apl/53/24/10.1063/1.100410
1988-12-12
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/24/10.1063/1.100410
10.1063/1.100410
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