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Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
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10.1063/1.100594
/content/aip/journal/apl/53/4/10.1063/1.100594
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/4/10.1063/1.100594
/content/aip/journal/apl/53/4/10.1063/1.100594
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/content/aip/journal/apl/53/4/10.1063/1.100594
1988-07-25
2014-11-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/4/10.1063/1.100594
10.1063/1.100594
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