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Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
1.A. Y. Cho, J. Appl. Phys. 41, 2780 (1970).
2.J. R. Arthur, Surf. Sci. 43, 449 (1974).
3.See, e.g., C. T. Foxon and B. A. Joyce, in Current Topics in Materials Science, edited by E. Kaldis (North‐Holland, New York, 1981), Vol. 7, Chap, 1.
4.The growth chamber has a base pressure less than and routinely produces material with carrier densities
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6.Perhaps due to a linear size dependence of the dissociative ionization cross section.
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12.For stoichiometric growth, one ML of Ga (plus one ML of As) corresponds to one bilayer of GaAs or 2.826 Å. Assuming a GaAs density of an incident flux of 1 ML/s then corresponds to
13.See, e.g., G. J. Davies and D. Williams, in The Technology and Physics of Molecular Beam Epitaxy, edited by E. H. C. Parker (Plenum, New York, 1985), Chap. 2, p. 38.
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16.Another newly developed real‐time MBE diagnostic is reflectance difference spectroscopy; see, e.g., D. E. Aspnes, J. P. Harbison, A. A. Studna, and L. T. Florez, Phys. Rev. Lett. 59, 1687 (1987).
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