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Diffusion of atomic silicon in gallium arsenide
1.E. F. Schubert, J. B. Stark, B. Ullrich, and J. E. Cunningham, Appl. Phys. Lett. 52, 1508 (1988).
2.H. C. Casey, Jr., in Atomic Diffusion in Semiconductors, edited by D. Shaw (Plenum, New York, 1973), p. 351.
3.M. E. Greiner and J. F. Gibbons, Appl. Phys. Lett. 44, 750 (1984).
4.E. Omura, X. S. Wu, G. A. Vawter, L. Coldren, E. Hu, and J. L. Merz, Electron. Lett. 22, 496 (1986).
5.The temperature of the rapid thermal annealing furnace is determined with a thermocouple. The absolute temperature of the furnace is controlled to The heating rate is 220 °C/s and the cooling rate is approximately 80 °C/s.
6.T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
7.Similar widths of C‐V profiles have been reported by N. Kobayashi, T. Makimoto, and Y. Horikoshi, Jpn. J. Appl. Phys. 25, L746 (1986).
8.The free‐carrier concentration obtained by integration of the C‐V profile agrees with the value of a Hall measurement of the same epitaxial layer grown side by side on a semi‐insulating GaAs substrate.
9.It is necessary to differentiate between the full width at half‐maximum and the standard deviation of a Gaussian probability distribution. The full width at half‐maximum equals 2.36 times the standard deviation. For a 30‐Å‐wide C‐V profile the intrinsic broadening is determined to be
10.Diffusion coefficients for Si in GaAs at have been summarized by M. E. Greiner and J. F. Gibbons, J. Appl. Phys. 57, 5181 (1985). The diffusion coefficients range from to
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