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Neutral E’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide
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10.1063/1.100617
/content/aip/journal/apl/53/6/10.1063/1.100617
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/6/10.1063/1.100617
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/content/aip/journal/apl/53/6/10.1063/1.100617
1988-08-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Neutral E’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/6/10.1063/1.100617
10.1063/1.100617
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