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Passivation of paramagnetic Si‐SiO2 interface states with molecular hydrogen
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19.B. J. Fishbein, J. T. Watt, and J. D. Plummer, J. Electrochem. Soc. 134, 674 (1987). These authors indicate that the diffusion constant for in their thermal oxides is given by the expression This value for is approximately 50 times smaller than Shelby’s (see Fig. 9 in Ref. 19). In the device structures of Fishbein et al. the has to diffuse for distances up to 500 000 Å in order to anneal interface states as measured by their electrical techniques. In their case they conclude that the annealing of interface states is limited by the diffusion rather than by the reaction kinetics at the interface state. In our study, the has to traverse the thickness of the oxide which is only 500 Å. Even if the rate of diffusion determined by Fishbein et al. is assumed, we calculate that the concentration is 98% equilibrated at our interface in 1 s at only 200 °C, whereas the annealing time needed to passivate the centers with is in excess of as measured by EPR. Thus, the rate‐limiting step in the chemical kinetics of passivation of centers in our case is not the diffusion of to the center but rather the direct reaction between the center and the
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