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Influence of the applied field frequency (27–2450 MHz) in high‐frequency sustained plasmas used to etch polyimide
1.S. Dzioba, G. Este, and H. M. Naguib, J. Electrochem. Soc. 129, 2537 (1982).
2.J. Paraszczak, M. Hatzakis, E. Babich, J. Shaw, E. Arthur, E. Grenon, and M. De Paul, Microcircuit Eng. 2, 517 (1984).
3.M. R. Wertheimer and M. Moisan, J. Vac. Sci. Technol. A 3, 2643 (1985).
4.C. M. Ferreira and J. Loureiro, J. Phys. D 17, 1175 (1984).
5.M. Moisan, M. Chaker, Z. Zakrzewski, and J. R. Paraszczak, J. Phys. E 20, 1356 (1987), and references therein.
6.R. Claude, M. Moisan, M. R. Wertheimer, and Z. Zakrzewski, Appl. Phys. Lett. 50, 1797 (1987).
7.M. Moisan and Z. Zakrzewski, U.S. Patent application No. 903 519 (1986).
8.M. Moisan and Z. Zakrzewski, Rev. Sci. Instrum. 58, 1895 (1987).
9.This is the case not only with surface wave plasmas but with all HF‐produced plasmas when pressure is low enough so that (ν is the electron‐neutral collision frequency for the momentum transfer and ω is the wave angular frequency). This is because the minimum electron plasma angular frequency at which the plasma can be sustained is given by where the exact value of A depends on the type of plasma, but is always of the order of unity.
10.N. J. Chou, J. Paraszczak, E. Babich, J. Heidenreich, Y. S. Chaug, and R. D. Goldblatt, J. Vac. Sci. Technol. A 5, 1321 (1987).
11.J. E. Heidenreich III, J. R. Paraszczak, M. Moisan, and G. Sauvé, J. Vac. Sci. Technol. B 5, 347 (1987).
12.B. Eliasson and U. Kotelschatz, Brown Boveri (Switzerland) Report No. KLR 86‐11C.
13.H. F. Winters and M. Inokuti, Phys. Rev. A 25, 1420 (1982).
14.H. Curtins, N. Wyrsch, M. Favre, and A. V. Shah, Plasma Chem. Plasma Process. 7, 267 (1987). These authors investigated the deposition rate of hydrogenated amorphous silicon using a rf capacitive plate discharge. With 200 mTorr of and a power density of they observed, over the range 25–150 MHz, a maximum in deposition rate at 70 MHz.
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