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Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate
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10.1063/1.99878
/content/aip/journal/apl/53/6/10.1063/1.99878
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/6/10.1063/1.99878
/content/aip/journal/apl/53/6/10.1063/1.99878
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/content/aip/journal/apl/53/6/10.1063/1.99878
1988-08-08
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/6/10.1063/1.99878
10.1063/1.99878
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