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Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive
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10.1063/1.99866
/content/aip/journal/apl/53/7/10.1063/1.99866
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/7/10.1063/1.99866
/content/aip/journal/apl/53/7/10.1063/1.99866
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/content/aip/journal/apl/53/7/10.1063/1.99866
1988-08-15
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive
http://aip.metastore.ingenta.com/content/aip/journal/apl/53/7/10.1063/1.99866
10.1063/1.99866
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