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Solid phase epitaxial regrowth of Si1−x Ge x /Si strained‐layer structures amorphized by ion implantation
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10.1063/1.100828
/content/aip/journal/apl/54/1/10.1063/1.100828
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/1/10.1063/1.100828
/content/aip/journal/apl/54/1/10.1063/1.100828
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/content/aip/journal/apl/54/1/10.1063/1.100828
1989-01-02
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/1/10.1063/1.100828
10.1063/1.100828
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